Electrostatic effects in coupled quantum dot-point contact-single electron transistor devices
نویسندگان
چکیده
منابع مشابه
Electrostatic effects in coupled quantum dot-point contact-single electron transistor devices
transistor devices S. Pelling, E. Otto, S. Spasov, S. Kubatkin, R. Shaikhaidarov, K. Ueda, S. Komiyama, and V. N. Antonov Physics Department, Royal Holloway University of London, Egham, Surrey TW20 0EX, United Kingdom Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, S-41296 Göteborg, Sweden Department of Basic Science, University of Tokyo, Komaba 3-8-1, Me...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4736419